all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 04, 2010-11-04 PTFA092213EL ptfa092213fl confidential, limited internal distribution rf characteristics two-carrier wcdma measurements (not subject to production testverifed by design/characterization in infneon test fxture) v dd = 30 v, i dq = 1850 ma, p out = 50 w average, ? 1 = 950 mhz, ? 2 = 960 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 17.5 db drain effciency h d 29 % intermodulation distortion imd C32 dbc thermally-enhanced high power rf ldmos fets 220 w, 920 C 960 mhz description the PTFA092213EL and ptfa092213fl are 220-watt, internally- matched ldmos fets designed for use in cellular power amplifer applications in the 920 to 960 mhz band. these devices feature internal i/o matching and thermally-enhanced open-cavity ceramic packages with slotted or earless fanges. manufactured with infneon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. PTFA092213EL package h-33288-6 features ? broadband internal matching ? typical two-carrier wcdma performance at 960 mhz, 30 v - average output power = 50 w - linear gain = 17.5 db - effciency = 29% - intermodulation distortion = C32 dbc - adjacent channel power = C42.5 dbc ? typical cw performance, 960 mhz, 30 v - output power at p 1db = 250 w - linear gain = 17.5 db - effciency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 220 w (cw) output power ? pb-free, rohs-compliant ptfa092213fl package h-34288-4/2 - 5 5 - 5 0 - 4 5 - 4 0 - 3 5 - 3 0 - 2 5 - 2 0 - 3 0 - 2 0 - 1 0 0 1 0 2 0 3 0 4 0 3 0 3 5 4 0 4 5 5 0 o u t p u t p o w e r ( d b m ) t w o - c a r r i e r w c d m a p e r f or m a nc e v d d = 3 0 v , i d q = 1 8 5 0 m a , ? = 9 6 0 m h z , 3 g p p w c d m a s i g n a l , p a r = 8 d b , 1 0 m h z c a r r i e r s p a c i n g , 3 . 8 4 m h z b a n d w i d t h i m d _ l o w e r a c p r g a i n i m d _ u p p e r g a i n ( d b ) , d r a i n e f f i c i e n c y ( % ) i m d ( d b c ) , a c p r ( d b c ) e f f i c i e n c y
data sheet 2 of 10 rev. 04, 2010-11-04 PTFA092213EL ptfa092213fl confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infneon test fxture) v dd = 30 v, i dq = 1850 ma, p out = 200 w pep, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 17.5 db drain effciency h d 40 42 % intermodulation distortion imd C30 C28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.04 w operating gate voltage v ds = 30 v, i dq = 1850 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70 c, 220 w cw) r qjc 0.23 c/w ordering information type and version package outline package description shipping PTFA092213EL v4 h-33288-6 thermally-enhanced, slotted fange, single-ended tray PTFA092213EL v4 r250 h-33288-6 thermally-enhanced, slotted fange, single-ended tape & reel, 250 pcs ptfa092213fl v5 h-34288-4/2 thermally-enhanced, earless fange, single-ended tray ptfa092213fl v5 r250 h-34288-4/2 thermally-enhanced, earless fange, single-ended tape & reel, 250 pcs
PTFA092213EL ptfa092213fl confidential, limited internal distribution data sheet 3 of 10 rev. 04, 2010-11-04 typical performance 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 3 5 4 0 4 5 5 0 5 5 d r a i n e f f i c i e n c y ( % ) g a i n ( d b ) o u t p u t p o w e r ( d b m ) c w p e r f or m a nc e g a i n & e f f i c i e nc y v s . o ut put p ow e r v d d = 3 0 v , i d q = 1 . 8 5 a , ? = 9 6 0 m h z e f f i c i e n c y g a i n - 4 0 - 3 5 - 3 0 - 2 5 - 2 0 - 1 5 - 1 0 - 5 0 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 9 0 0 9 1 0 9 2 0 9 3 0 9 4 0 9 5 0 9 6 0 9 7 0 9 8 0 9 9 0 r e t u r n l o s s ( d b ) f r e q u e n c y ( m h z ) b r oa dba nd t w o - t one g a i n, e f f i c i e nc y & r e t ur n los s v s . fr e que nc y v d d = 3 0 v , i d q = 1 . 8 5 a , p o u t = 1 1 0 w r e t u r n l o s s g a i n e f f i c i e n c y d r a i n e f f i c i e n c y ( % ) , g a i n ( d b ) 1 5 1 6 1 7 1 8 1 9 2 0 3 5 4 0 4 5 5 0 5 5 p o w e r g a i n ( d b ) o u t p u t p o w e r ( d b m ) p ow e r s w e e p, c w v d d = 3 0 v , ? = 9 6 0 m h z i d q = 1 . 8 5 a i d q = 2 . 6 a i d q = 1 . 1 a 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 3 5 4 0 4 5 5 0 5 5 d r a i n e f f i c i e n c y ( % ) g a i n ( d b ) o u t p u t p o w e r ( d b m ) c w p e r f or m a nc e g a i n & e f f i c i e nc y v s . o ut put p ow e r v d d = 3 0 v , i d q = 1 . 8 5 a , ? = 9 6 0 m h z e f f i c i e n c y g a i n t c a s e = - 1 0 c t c a s e = 2 5 c t c a s e = 9 0 c
data sheet 4 of 10 rev. 04, 2010-11-04 PTFA092213EL ptfa092213fl confidential, limited internal distribution typical performance (cont.) - 7 0 - 6 0 - 5 0 - 4 0 - 3 0 - 2 0 3 5 4 0 4 5 5 0 5 5 i m d ( d b c ) o u t p u t p o w e r , p e p ( d b m ) i nt e r m odul a t i on d i s t or t i on v s . o ut put p ow e r v d d = 3 0 v , i d q = 1 . 8 5 a , ? 1 = 9 6 0 m h z , ? 2 = 9 5 9 m h z 5 t h 7 t h 3 r d o r d e r - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 - 3 0 0 1 0 2 0 3 0 4 0 5 0 3 0 3 5 4 0 4 5 5 0 d r a i n e f f i c i e n c y ( % ) o u t p u t p o w e r ( d b m ) , a v g . i s - 9 5 c d m a p e r f or m a nc e v d d = 3 0 v , i d q = 1 . 8 5 a , ? = 9 6 0 m h z a d j 7 5 0 k h z a l t 1 1 . 9 8 m h z e f f i c i e n c y a d j . c h . p o w e r r a t i o ( d b c ) - 6 0 - 5 5 - 5 0 - 4 5 - 4 0 - 3 5 - 3 0 0 1 0 2 0 3 0 4 0 5 0 6 0 3 0 3 5 4 0 4 5 5 0 i m d ( d b c ) o u t p u t p o w e r ( d b m ) s i ngl e - c a r r i e r w c d m a p e r f or m a nc e v d d = 3 0 v , i d q = 1 8 5 0 m a , ? = 9 6 0 m h z , 3 g p p w c d m a s i g n a l , p a r = 8 . 5 d b , 3 . 8 4 m h z b a n d w i d t h e f f i c i e n c y i m d g a i n g a i n ( d b ) , e f f i c i e n c y ( % )
PTFA092213EL ptfa092213fl confidential, limited internal distribution data sheet 5 of 10 rev. 04, 2010-11-04 broadband circuit impedance frequency z source w z load w mhz r jx r jx 910 1.44 C3.01 1.57 C2.30 920 1.43 C2.92 1.56 C2.18 930 1.42 C2.83 1.55 C2.05 940 1.42 C2.74 1.54 C1.93 950 1.41 C2.66 1.53 C1.81 960 1.41 C2.57 1.52 C1.69 970 1.41 C2.48 1.51 C1.56 see next page for reference circuit information 0.1 0.3 0.2 0.4 0 . 1 0 . 3 0 . 2 0 . 4 0 . 1 0 . 3 0 . 2 0 . 4 - w a v e l e n g t h s t o w a r d g e n e r a t o r - - - > 0 . 0 5 0 . 4 5 0 . 0 5 0 . 4 5 < - - - w a v e l e n g t h s t o w a r d l oa d - 0 . 0 e d to 50 ohms 2213efl v4 z load z source 910 mhz 970 mhz 970 mhz 910 mhz z 0 = 50 w z source z load g s d
data sheet 6 of 10 rev. 04, 2010-11-04 PTFA092213EL ptfa092213fl confidential, limited internal distribution reference circuit reference circuit block diagram for ? = 960 mhz c2 .001f c30 1.7pf c29 1. 7pf dut c4 0 .001 f c9 .01 f ? 5 c14 4. 8pf c13 4.8 pf r5 1 .2k ? r1 1. 2 k ? r4 1.2k ? c5 0.001 f c3 0.001f q1 bcp56 r2 1.3k ? qq1 lm7805 c1 0 .001 f v dd r 6 10 ? c11 33 pf c7 47 pf c 10 33 pf r8 5.1k ? r7 10 ? ? 1 c12 3.0pf ? 2 ? 3 ? 4 rf_in c6 .01 f rf_out c 16 10f c18 1 f c17 .01f c21 10 f 50 v c31 33 pf c 20 10f ? 9 ? 10 ? 11 ? 12 ? 13 c 19 10f c22 10 f c 25 1f c24 .01 f c28 10 f 50 v c27 10 f c26 10 f v dd ? 7 ? 8 ? 6 r9 10 ? c8 4. 7f c 15 10f c 23 10f r3 1.0k ? a 0 9 2 2 1 3 e f l _ b d _ 0 9 - 0 2 - 2 0 1 0 circuit assembly information 8 3)(/ru3))/ 3 /13)() ppwlfn h u 5rhuv52rfrsshu electrical characteristics at 960 mhz transmission electrical dimensions: l x w (mm) dimensions: l x w (in.) line characteristics l1 0.167 o, 50.1 l2 0.047 o, 38.0 l3 0.039 o, 38.0 l4 0.072 o, 7.8 l5 0.046 o, 7.8 l6 0.163 o, 78.3 l7, l8 0.043 o, 23.5 l9 0.130 o, 8.3 l , 8.3 l , 11.7 l12 0.009 o, 37.0 l13 0.167 o, 50.1
PTFA092213EL ptfa092213fl confidential, limited internal distribution data sheet 7 of 10 rev. 04, 2010-11-04 reference circuit (cont.) reference circuit assembly diagram (not to scale)* * gerber files for this circuit available on request component description suggested manufacturer p/n c1, c2, c3, c4, c5 capacitor, 0.001 f digi-key pcc1772ct-nd c18, c25 capacitor, 1 f atc 920c105 c8 capacitor, 4.7 f, 16 v digi-key pcs3475ct-nd c6, c9, c17, c24 capacitor, 0.01f atc 200b 103 c15, c16, c19, c20, tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c22, c23, c26, c27 c21, c28 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c29, c30 ceramic capacitor, 1.7 pf atc 100b 1r7 c13, c14 ceramic capacitor, 4.8 pf atc 100b 4r8 c12 ceramic capacitor, 3.0 pf atc 100b 3r0 c10, c11, c31 ceramic capacitor, 33 pf atc 100b 330 c7 ceramic capacitor, 47 pf atc 100b 470 q1 transistor infneon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1, r4 chip resistor, 1.2 k w digi-key p1.2kgct-nd r2 chip resistor, 1.3 k w digi-key p1.3kgct-nd r3 chip resistor, 2 k w digi-key p2kect-nd r5 potentiometer, 2 k w digi-key 3224w-202etr-nd r8 chip resistor, 5.1 k w digi-key p5.1kect-nd r6, r7, r9 chip resistor, 10 w digi-key p10ect-nd notes: unless otherwise indicated 1. original drawing was draftingfilename 2. the contents of this drawing are intended to represent the product in eflarketing graphics only, and are not intended to be used for any production purpose . 3. 4. this docueflent and the inforeflation and ideas contained herein , are the property of infineon technologies and shall be eflaintained in confidence and shall not be disclosed, duplicated , copied or used as a basis for the eflanufacture or sale of any product or process without prior written consent of infineon technologies . approvals date drawn by : checked by : engineer : r & d eflanager : eflfg engineer: qa: third angle projection infineon technologies 18275 serene drive eflorgan hill , ca 95037, u.s.a. phone: 408-776-0600 fax: 408-779- 3108 eus/kr forefl 1 48e revsions description: product : size: drawing nueflber : rev zone rev description date approved a initial release per ecn ifx -04-xxx bn 02-10-04 b northwood 2008 -11-12 xx xx xx xx xx reference circuit asseeflbly diagraefl ptfa092213 efl size: drawing nueflber : rev scale: none file naefle : a 092213 efl_ckt . vsd sheet : 2 of 2 a 092213 efl_ckt . vsd a a092213efl_cd v66100-g9270 -c331- 01-7631. dwg the contents of this drawing are intended to represent the product in eflarketing graphics only , and are not intended to be used for any production or internal qualification purpose . ptfa 092213 efl reference on graphic : a 092213 efl_cd_7-9-09 rf _out a 0 9 2 2 1 3 e f l _ c d _ 1 1 - 0 4 - 2 0 1 0 rf_in c 12 c 30 c 29 c 9 c 10 c 8 r 8 r7 c 7 c 6 r4 c 5 c 4 c 1 r1 c 2 r3 c 3 r2 r9 c 11 c 19 c 18 c 15 c 16 c 17 c 20 c 31 c 24 c 23 c 22 c 27 c 26 c 25 r 6 c 14 c 28 c 21 r5 qq 1 q1 c 13 v dd v dd v dd
data sheet 8 of 10 rev. 04, 2010-11-04 PTFA092213EL ptfa092213fl confidential, limited internal distribution package outline specifcations package h-33288-6 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: a = gate, b = source, c = drain, d = v dd , e, f = n.c. 5. lead thickness: 0.10 + 0.051/C0.025 mm [.004 +0.002/C0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. +. 254 C. 127 +. 010 C. 005 ] l c d g s c l 19 . 558 . 510 [. 770 . 020 ] 27 . 940 [ 1 . 100 ] 2 x 12 . 700 [. 500 ] 45 x 2 . 032 [ 45 x . 080 ] 4 x 1 . 143 [. 045 ] ( 4 pls ) 9 . 398 [. 370 ] 9 . 779 [. 385 ] 34 . 036 [ 1 . 340 ] 1 . 016 [. 040 ] 1 . 575 [. 062 ] ( sph ) 22 . 352 . 200 [. 880 . 008 ] 4 . 039 [ . 159 2 x 22 . 860 [. 900 ] [. 200 ] ( 2 pls ) c l 4 . 889 . 510 [. 192 . 020 ] 4 x r 1 . 524 [ r . 060 ] 2 x r 1 . 626 [ r . 064 ] v e v f 4 x 30 h - 33288 - 6 _ po _ 02 - 18 - 2010 2 x 5 . 080
PTFA092213EL ptfa092213fl confidential, limited internal distribution data sheet 9 of 10 rev. 04, 2010-11-04 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower 2cemcgg5rgeec fr package h-34288-4/2 ldudp1rwhvxohvvrwhuzlvhvshflh ,whusuhwlphvlrvdwrohudfhvshu60(0 3ulpdulphvlrvduhppowhudwhlphvlrvduhlfhv oowrohudfhvxohvvvshflhrwhuzlvh 3lv udl6 vrxufh dwh9 9 dd . hdwqhvvppq rosodwqjwqhvvpurqpurqpd l c d g c l 19 . 558 . 510 [. 770 . 020 ] 2 x 12 . 700 [. 500 ] 45 x 2 . 032 [ 45 x . 080 ] 2 x 1 . 143 [. 045 ] 9 . 398 [. 370 ] 9 . 779 [. 385 ] 23 . 114 [. 910 ] 1 . 016 [. 040 ] 1 . 575 [. 062 ] ( sph ) 22 . 352 . 200 [. 880 . 008 ] 4 . 039 +. 254 - . 127 [ . 159 +. 010 - . 005 ] 22 . 860 [. 900 ] 2 x 5 . 080 [. 200 ] 4 . 889 . 510 [. 192 . 020 ] v v s 2 x 30 c 66065 - a 0003 - c 743 - 01 - 0027 h - 34288 - 4 _ 2 . dwg l c 4 x r 0 . 508 +. 381 - . 127 [ r . 020 +. 015 - . 005 ]
data sheet 10 of 10 rev. 04, 2010-11-04 edition 2010-11-04 published by infneon technologies ag 81726 munich, germany ? 2009 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of infneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international PTFA092213EL v4/ ptfa092213 fl v5 confdential, limited internal distribution revision history: 2010-11-04 data sheet previous version: 2010-09-03, data sheet page subjects (major changes since last revision) 1, 2, 8 updated eared fange package information
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